Search results for "Metal–semiconductor junction"

showing 4 items of 4 documents

The Amorphous Semiconductor Schottky Barrier Approach to Study the Electronic Properties of Anodic Films on Ti

2017

A detailed study of the electronic properties of thin (>20 nm) anodic TiO2 potentiostatically grown on titanium in two different solutions is presented. The results show that the nature of the anodizing solution affects the electronic properties of the anodic film and, more specifically, the density of electronic states (DOS) distribution. Different DOS were derived from the experimental data analyzed according to the theory of amorphous semiconductor (a-SC) Schottky barrier. It is shown that the usual non-linear and frequency dependent Mott-Schottky plots are in agreement with expected theoretical behavior of a-SC Schottky barrier.

Materials Chemistry2506 Metals and AlloysAmorphous semiconductorsMaterials scienceRenewable Energy Sustainability and the Environmentbusiness.industryElectronic Optical and Magnetic MaterialSchottky barrierSurfaces Coatings and Film02 engineering and technology010402 general chemistry021001 nanoscience & nanotechnologyCondensed Matter PhysicsMetal–semiconductor junction01 natural sciences0104 chemical sciencesSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsAnodeSettore ING-IND/23 - Chimica Fisica ApplicataMaterials ChemistryElectrochemistryOptoelectronics0210 nano-technologybusinessElectronic propertiesJournal of The Electrochemical Society
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Application of superconductor-semiconductor Schottky barrier for electron cooling

2003

Abstract Electronic cooling in superconductor–semiconductor–superconductor structures at sub kelvin temperatures has been demonstrated. Effect of the carrier concentration in the semiconductor on performance of the micro-cooler has been investigated.

SuperconductivityMaterials scienceCondensed matter physicscoolingbusiness.industryCondensed Matter::Otherelectronic coolingsuperconductor-semiconductor junctionSchottky barriermicrocoolerssuperconductivityCondensed Matter PhysicsMetal–semiconductor junctionCondensed Matter::Mesoscopic Systems and Quantum Hall EffectElectronic Optical and Magnetic Materialslaw.inventionCondensed Matter::Materials ScienceSemiconductorlawCondensed Matter::SuperconductivityElectrical and Electronic EngineeringbusinessSchottky barrierElectron coolingPhysica B: Condensed Matter
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300°C SiC Blocking Diodes for Solar Array Strings

2009

Silicon Carbide 300V-5A Ni and W Schottky diodes with high temperature operation capability (up to 300°C) have been fabricated. This paper reports on the stability tests (ESA space mission to Mercury, BepiColombo requirements) performed on these diodes. A DC current stress of 5A has been applied to these diodes at 270°C for 800 hours. These reliability tests revealed both, degradation at the Schottky interface (forward voltage drift) and at the diode top surface due to Aluminum diffusion (bond pull strength degradation). The use of W as Schottky metal allows eliminating the forward voltage drift producing stable metal–semiconductor interface properties. Nevertheless, SEM observations of the…

Wire bondingMaterials sciencebusiness.industryMechanical EngineeringPhotovoltaic systemchemistry.chemical_elementSchottky diodeCondensed Matter PhysicsMetal–semiconductor junctionMetalchemistry.chemical_compoundchemistryMechanics of MaterialsAluminiumvisual_artvisual_art.visual_art_mediumSilicon carbideOptoelectronicsGeneral Materials SciencebusinessDiodeMaterials Science Forum
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Charge Transport Mechanisms in Heavy-Ion Driven Leakage Current in Silicon Carbide Schottky Power Diodes

2016

Under heavy-ion exposure at sufficiently high reverse bias voltages silicon carbide (SiC) Schottky diodes are observed to exhibit gradual increases in leakage current with increasing ion fluence. Heavy-ion exposure alters the overall reverse current-voltage characteristics of these diodes, leaving the forward characteristics practically unchanged. This paper discusses the charge transport mechanisms in the heavy-ion damaged SiC Schottky diodes. A macro model, describing the reverse current-voltage characteristics in the degraded SiC Schottky diodes is proposed. peerReviewed

silicon carbide (SiC)Materials scienceAnnealing (metallurgy)Schottky barrierSchottky diodesMetal–semiconductor junction01 natural sciencesTemperature measurementpower semiconductor deviceschemistry.chemical_compoundstomatognathic system0103 physical sciencesSilicon carbidecurrent-voltage characteristicsElectrical and Electronic EngineeringSafety Risk Reliability and QualityDiode010302 applied physicsta114ta213010308 nuclear & particles physicsbusiness.industrySchottky diodemodelingElectronic Optical and Magnetic MaterialschemistryOptoelectronicsbusinession radiation effectsVoltageIEEE Transactions on Device and Materials Reliability
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